JPH0442830B2 - - Google Patents

Info

Publication number
JPH0442830B2
JPH0442830B2 JP57010501A JP1050182A JPH0442830B2 JP H0442830 B2 JPH0442830 B2 JP H0442830B2 JP 57010501 A JP57010501 A JP 57010501A JP 1050182 A JP1050182 A JP 1050182A JP H0442830 B2 JPH0442830 B2 JP H0442830B2
Authority
JP
Japan
Prior art keywords
impurity diffusion
wiring film
type
film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57010501A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58127348A (ja
Inventor
Kazuhiro Sakashita
Hiroichi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57010501A priority Critical patent/JPS58127348A/ja
Publication of JPS58127348A publication Critical patent/JPS58127348A/ja
Publication of JPH0442830B2 publication Critical patent/JPH0442830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57010501A 1982-01-25 1982-01-25 大規模半導体集積回路装置 Granted JPS58127348A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57010501A JPS58127348A (ja) 1982-01-25 1982-01-25 大規模半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57010501A JPS58127348A (ja) 1982-01-25 1982-01-25 大規模半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58127348A JPS58127348A (ja) 1983-07-29
JPH0442830B2 true JPH0442830B2 (en]) 1992-07-14

Family

ID=11751941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57010501A Granted JPS58127348A (ja) 1982-01-25 1982-01-25 大規模半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58127348A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196966A (ja) * 1984-03-21 1985-10-05 Toshiba Corp 相補型半導体装置
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPH0695570B2 (ja) * 1985-02-07 1994-11-24 三菱電機株式会社 半導体集積回路装置
JPS61248445A (ja) * 1985-04-25 1986-11-05 Nec Corp 集積回路
JP2960428B2 (ja) * 1988-12-28 1999-10-06 旭化成マイクロシステム株式会社 スイッチアレイ用半導体装置の製造方法
JP2997479B2 (ja) * 1989-06-12 2000-01-11 三菱電機株式会社 ゲートアレイ
JP4543061B2 (ja) 2007-05-15 2010-09-15 株式会社東芝 半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146195A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device

Also Published As

Publication number Publication date
JPS58127348A (ja) 1983-07-29

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